Engineering Projects

In the common-emitter configuration of PNP, the transistor emitter is the terminal common to both the input side and output side. The signal to be amplified is applied between base and emitter forming the input circuit while the amplified output voltage is developed across load impedance in the collector-to-emitter forming the output circuit. Figure 1 gives the basic circuit of a CE amplifier using load resistor RC. The Large Signal Current Gain | Common Emitter Configuration of PNP Transistor In a CB transistor, IE forms the input current while IC is…

Here in this article we will going to discuss about characteristic curves of CB transistor like static input and static output characteristic curve of CB transistor (Common Base). Characteristic Curves of Transistor in Common Base Configuration Figure 1 shows a PNP transistor connected in Common Base (CB) configuration. Base is the terminal common to the input side and the output side and this terminal has been grounded. Then we are left with two voltage variables namely VEB and VCB. Further the current IB is ignored since it is nothing but…

In this article you will learn about emitter efficiency, base transport factor, The early effect, dynamic emitter resistance and amplifier action of transistor. What do you mean by amplifying action of transistor? A transistor may serve various functions but basically it is used to amplify an electrical signal. Figure 1 gives the basic circuit of a PNP transistor amplifier in common base (CB) configuration. However, we may use an NPN transistor and get the same results. In figure 1, the transistor is biased for active region operation i.e. JE is…

Figure 1 shows the various current components in a pnp transistor operating in the active region. The entire emitter current IE consist of two parts (i) hole current IpE carried by holes diffusing across JE from p-type emitter to n-type base and (ii) electron current InE carried by electrons diffusion across JE from n-type base to p-type emitter. The ratio equals where and are respectively the conductivity of the p-type emitter region and n-type base region. Typically > . Hence in a pnp transistor, IpE>>Inr and hence we may neglect…

A bipolar junction transistor (BJT) forms an extension of a PN diode. It is three-layer semiconductor device with two junctions. Further it is a bipolar device i.e. the current is carried by two types of charge carriers namely electrons and holes and hence the device is called a Bipolar Junction Transistors. A BJT is basically used as an amplifier i.e. as a circuit for amplifying or increasing the magnitude of a periodic or an a-periodic voltage or current. A junction transistor may be of PNP type or NPN type and…